Time and total dose response of non-volatile UVPROMs

Author

Sampson, David F.

Author_Institution

Harris Gov. Aerosp. Syst. Div., Melbourne, FL, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1542

Lastpage

1546

Abstract

The total-dose radiation response and intrinsic charge loss are reported as a function of operating time in a system. Five groups of Intel and Signetics 27C256 devices were aged from one to five years through accelerated bake to simulate system use. Characterizations of the groups with five years of simulated use are presented. The device margin voltage was characterized before and after aging and after exposure to five total-dose radiation levels (1 K-5 K rads (Si)). A statistical model based upon the characterization data was developed to establish reprogramming intervals for these devices when they are used in airborne electronic systems

Keywords

CMOS integrated circuits; PROM; environmental testing; inspection; integrated circuit technology; integrated circuit testing; integrated memory circuits; life testing; radiation hardening (electronics); reliability; semiconductor technology; 1 to 5 y; 1E3 to 5E3 Rd; 256 kbit; 27C256 devices; CMOS; Intel; Si; Signetics; UVPROMs; accelerated bake; aging; airborne electronic systems; characterization data; device margin voltage; intrinsic charge loss; operating time; radiation hardness testing; reprogramming intervals; simulated use; statistical model; system use simulation; time response; total-dose radiation levels; total-dose radiation response; Aerospace testing; Aging; Contamination; Life testing; Logic devices; Nonvolatile memory; Pollution measurement; System testing; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25494

Filename

25494