DocumentCode :
1001334
Title :
Analytic SEU rate calculation compared to space data
Author :
Binder, Daniel
Author_Institution :
Hughes Aircraft Co., Los Angeles, CA, USA
Volume :
35
Issue :
6
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
1570
Lastpage :
1572
Abstract :
A method is described for deriving analytic expressions for single-event-upset rates in space. The method is applicable to semiconductor devices with sensitive volumes approximating a thin lamina. The approximation applies to a large majority of devices in use today. The method replaces more complicated calculations involving chord distributions without any loss in rigor. The results agree with satellite data for the 93L422, the 54L78, and an NMOS RAM used in the Global Positioning Satellite
Keywords :
bipolar integrated circuits; field effect integrated circuits; integrated circuit technology; integrated circuit testing; integrated logic circuits; integrated memory circuits; radiation hardening (electronics); random-access storage; semiconductor technology; 54L78; 93L422; GPS; Global Positioning Satellite; NMOS RAM; SEU rate calculation; analytic expressions; majority of devices; radiation hardness; satellite data; semiconductor devices; sensitive volumes; single-event-upset rates in space; space data; thin lamina; Aircraft; Cyclotrons; Equations; MOS devices; Satellites; Semiconductor devices; Single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.25499
Filename :
25499
Link To Document :
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