Afterpulsing Effects in Free-Running InGaAsP Single-Photon Avalanche Diodes

Author

Jiang, Xudong ; Itzler, Mark A. ; Ben-Michael, R. ; Slomkowski, Krystyna ; Krainak, Michael A. ; Wu, Stewart ; Sun, Xiaoli

Author_Institution

Princeton Lightwave Inc., Cranbury

Volume

44

Issue

1

fYear

2008

Firstpage

3

Lastpage

11

Abstract

We demonstrate large-area (80 mum diameter) InP-based single-photon avalanche diodes for Geiger-mode operation at 1.06 mum with dark count rates of ~1000 Hz at high detection efficiencies of 30% at 237 K, as well as simulations of dark count rate and detection efficiency that provide good agreement with measured data. Experimental results obtained using free-running operation illustrate the strong impact of afterpulsing effects for short (~200 ns) hold-off times. We present an analysis of these free-running results that quantifies the contribution of afterpulsing to the total count rate.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; photodetectors; Geiger-mode operation; InGaAsP; afterpulsing effects; dark count rate; free-running InGaAsP diodes; frequency 1000 Hz; single-photon avalanche diodes; size 80 mum; temperature 237 K; time 200 ns; wavelength 1.06 mum; Bridges; Diodes; Laser radar; Optical design; Optical fiber communication; Photodiodes; Photonic band gap; Remote sensing; Silicon; Sun; Avalanche photodiodes; photodiodes; single photon detection; single-photon avalanche diodes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2007.906996

Filename

4397140