• DocumentCode
    1001350
  • Title

    A theoretical study of transducer noise in piezoresistive and capacitive silicon pressure sensors

  • Author

    Spender, R.R. ; Fleischer, Bruce M. ; Barth, Phillip W. ; Angell, James B.

  • Author_Institution
    Integrated Circuits Lab., Stanford Univ., CA, USA
  • Volume
    35
  • Issue
    8
  • fYear
    1988
  • fDate
    8/1/1988 12:00:00 AM
  • Firstpage
    1289
  • Lastpage
    1298
  • Abstract
    An analysis of the effect of noise introduced by the transduction process on the minimum detectable signal (MDS) of piezoresistive and capacitive pressure sensors has been performed. MDS is first introduced as an appropriate figure of merit for comparing different sensor transduction schemes. Analyses are then performed to determine the minimum MDS theoretically achievable for a broad range of generic transducer circuits. The results of the analyses indicate that noise in the transduction process is not a limiting factor in the performance of properly designed integrated silicon sensors
  • Keywords
    electric sensing devices; electron device noise; elemental semiconductors; piezoelectric transducers; pressure transducers; semiconductor device models; silicon; capacitive pressure sensors; figure of merit; generic transducer circuits; integrated Si sensors; minimum detectable signal; piezoresistive pressure sensors; sensor transduction schemes; theoretical study; transducer noise; Capacitance measurement; Capacitive sensors; Circuit noise; Electrical resistance measurement; Noise measurement; Performance analysis; Piezoresistance; Signal detection; Silicon; Transducers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2550
  • Filename
    2550