DocumentCode :
1001365
Title :
Investigation of single-event upset (SEU) in an advanced bipolar process
Author :
Zoutendyk, John A. ; Secrest, Elaine C. ; Berndt, Dale F.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
35
Issue :
6
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
1573
Lastpage :
1577
Abstract :
An extensive analytical and experimental study of SEU in an advanced silicon bipolar process was made. The modeling used process and device parameters to model the SEU charge, collection, and circuit response derived from a special version of PISCES in cylindrical coordinates and SPICE, respectively. Data are reported for test cells of various sizes
Keywords :
bipolar integrated circuits; circuit analysis computing; integrated circuit technology; radiation hardening (electronics); semiconductor technology; PISCES; SPICE; Si; analytical study; bipolar process; circuit response; cylindrical coordinates; device parameters; experimental study; model; process parameters; radiation hardness; single-event upset; test cells; Circuit simulation; Circuit testing; Discrete event simulation; Flip-flops; Geometry; Pulse circuits; SPICE; Semiconductor device measurement; Silicon; Single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.25500
Filename :
25500
Link To Document :
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