DocumentCode :
1001370
Title :
A new Schmitt trigger circuit in a 0.13-μm 1/2.5-V CMOS process to receive 3.3-V input signals
Author :
Chen, Shih-Lun ; Ker, Ming-Dou
Author_Institution :
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume :
52
Issue :
7
fYear :
2005
fDate :
7/1/2005 12:00:00 AM
Firstpage :
361
Lastpage :
365
Abstract :
A new Schmitt trigger circuit, which is implemented by low-voltage devices to receive the high-voltage input signals without gate-oxide reliability problem, is proposed. The new proposed circuit, which can be operated in a 3.3-V signal environment without suffering high-voltage gate-oxide overstress, has been fabricated in a 0.13-μm 1/2.5-V 1P8M CMOS process. The experimental results have confirmed that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 and 2.5 V, respectively. The new proposed Schmitt trigger circuit is suitable for mixed-voltage input-output interfaces to receive input signals and reject input noise.
Keywords :
CMOS digital integrated circuits; integrated circuit reliability; low-power electronics; trigger circuits; 0.13 micron; 3.3 V; CMOS digital integrated circuits; Schmitt trigger circuit; gate-oxide reliability; low-power electronics; low-voltage devices; mixed-voltage input-output interface; Breakdown voltage; CMOS process; Circuit noise; Inverters; MOSFETs; Semiconductor device noise; Signal processing; Stress; Threshold voltage; Trigger circuits; Gate-oxide reliability; Schmitt trigger; input–output (I/O); mixed-voltage interface;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2005.850409
Filename :
1468331
Link To Document :
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