Title :
Alpha-, boron-, silicon- and iron-ion-induced current transients in low-capacitance silicon and GaAs diodes
Author :
Wagner, Ronald S. ; Bordes, Nicole ; Bradley, Jeffrey K. ; Maggiore, C.J. ; Knudson, Alvin R. ; Campbell, Arthur B.
Author_Institution :
Los Alamos Nat. Lab., NM, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
High-speed current transient measurements were made over a large range of linear energy transfer (LET), using a wideband 70-GHz (6-ps-risetime) sampling oscilloscope on high resistivity GaAs diodes and 1-, 3-, and 10-Ω-cm silicon diodes. For 3- and 5-MeV alpha particles, 12-MeV boron, 18-MeV silicon, and 12- and 100-MeV iron ions incident on these devices, risetimes in the range from about 38 ps to 100 ps were produced depending on LET and device resistivity. Results are compared to the productions of various models
Keywords :
III-V semiconductors; alpha-particle effects; boron; elemental semiconductors; gallium arsenide; ion beam effects; iron; radiation hardening (electronics); semiconductor device models; semiconductor diodes; semiconductor technology; silicon; 1 to 10 ohmcm; 3 to 100 MeV; 38 to 100 ps; 6 ps; 70 GHz; B ions; Fe ions; GaAs diodes; He ions; LET; SEU; Si diodes; Si ions; alpha particles; current transient measurements; device resistivity; linear energy transfer; low capacitance diodes; radiation hardness; risetimes; sampling oscilloscope; semiconductors; single event upset; Conductivity; Current measurement; Diodes; Energy exchange; Energy measurement; Gallium arsenide; Oscilloscopes; Sampling methods; Silicon; Wideband;
Journal_Title :
Nuclear Science, IEEE Transactions on
