Low temperature proton induced upsets in NMOS resistive load static RAM

Author

Stapor, W.J. ; McDonald, P.T. ; Swickert, S.L. ; Campbell, A.B. ; Massengill, L.W. ; Kerns, S.E.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1596

Lastpage

1601

Abstract

Proton-induced upset measurements were performed on some NMOS resistive-load static RAMs for temperatures down to -125°C. Results show that the upset cross section strongly depends on temperature as well as the incident beam flux. SPICE modeling for the critical charge versus temperature is not sufficient to explain the data. An explanation is provided that describes multiple subcritical linear-energy-transfer particle strikes within RAM cell integration times that cause upsets

Keywords

field effect integrated circuits; integrated circuit technology; integrated memory circuits; proton effects; radiation hardening (electronics); random-access storage; semiconductor technology; -125 to 125 C; NMOS resistive load static RAM; RAM cell integration times; SEU; SPICE modeling; SRAM; critical charge versus temperature; incident beam flux; low temperature operation; multiple subcritical linear-energy-transfer particle strikes; proton induced upsets; single event upset; upset cross section; Logic devices; MOS devices; Nitrogen; Performance evaluation; Protons; Single event upset; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25504

Filename

25504