DocumentCode
1001424
Title
InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integration
Author
Li, Kaicheng ; Rezek, E. ; Law, H.D.
Author_Institution
TRW, Electro-Optics Research Center, El Segundo, USA
Volume
20
Issue
5
fYear
1984
Firstpage
196
Lastpage
198
Abstract
A low-dark-current high-speed InGaAs PIN photodiode suitable for optoelectronic monolithic integration has been fabricated by LPE method on semi-insulating InP substrate. The photodiode has the lowest reported dark-current density of 2.5 × 10¿6 A/cm2 at ¿10 V in this material system. At the operating voltage of ¿5 V, an external quantum efficiency of >90% at 1.3 ¿m and >83% at 1.55 ¿m, a rise time of <35 ps and an FWHM of <45 ps have been measured.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; photodiodes; FWHM; InGaAs PIN photodiode; InP semiinsulating substrate; LPE; dark-current density; external quantum efficiency; fabrication; integrated optics; low-dark-current; operating voltage; optoelectronic monolithic integration; rise time; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840130
Filename
4249743
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