Title :
Total dose radiation characteristics of SOI MOSFETs fabricated using ISLANDS technology
Author :
Matloubian, Mishel ; Zorinsky, Eldon J. ; Spratt, David B.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Total-dose-radiation results for n- and p-channel silicon-on-insulator (SOI) MOSFETs fabricated using ISLANDS (oxidation of porous silicon) technology and subjected to Co-60 gamma radiation are reported. The back-gates of both n- and p-channel transistors were hard to 1 Mrad(Si) with either -5 or 0 V on the substrate during irradiation. The buildup of radiation-induced interface traps at the back-gate of n-channel MOSFETs compensated for the threshold voltage shift due to oxide-trapped charges. The front-gate hardness was similar to that of bulk MOSFETs
Keywords :
electron traps; gamma-ray effects; insulated gate field effect transistors; oxidation; 1E6 rad; 60Co; ISLANDS technology; SOI MOSFETs; back-gate; front-gate hardness; n-channel; oxidation; oxide-trapped charges; p-channel transistors; radiation-induced interface traps; threshold voltage shift; total-dose-radiation characteristics; Circuits; Dielectric substrates; Electrons; FETs; Isolation technology; Laboratories; MOSFETs; Semiconductor films; Silicon; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
