Radiation response of CMOS/SOI devices formed by wafer bond and etchback

Author

Palkuti, L.J. ; Ling, P. ; Leonov, P. ; Kawayoshi, H. ; Ormond, R. ; Yuan, J.

Author_Institution

ARACOR, Sunnyvale, CA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1653

Lastpage

1656

Abstract

The fabrication process and defect characteristics of thin-film silicon-on-insulator (SOI) devices prepared by the bond and etchback process (BESOI) utilizing diamond matching and noncontact polishing were studied. MOS devices were fabricated and were characterized electrically before and after radiation exposure. Analysis by TEM shows that a defect-free film is produced by the BESOI process. CMOS devices show high mobility and low leakage current (less than 1.0 pA/μm). The radiation responses of the top and edge oxide are comparable to those of bulk devices. Positive charge trapping and interface-trap generation were -0.8 and 0.8 V, respectively, at a dose of 10 Mrad (SiO₂)

Keywords

CMOS integrated circuits; etching; radiation effects; transmission electron microscopy; 10E6 rad; BESOI; CMOS/SOI devices; TEM; defect characteristics; defect-free film; diamond matching; edge oxide; etchback; fabrication process; interface-trap generation; leakage current; mobility; noncontact polishing; radiation exposure; thin-film silicon-on-insulator; top oxide; wafer bond; CMOS process; Etching; Machining; Oxidation; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Substrates; Thickness control; Wafer bonding;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25515

Filename

25515