Title :
High-efficiency V-band GaAs IMPATT diodes
Author :
Ma, Y.E. ; Benko, E. ; Trinh, Thang ; Erickson, L.P. ; Mattord, T.J.
Author_Institution :
Hughes Aircraft Company, Electron Dynamics Division, Torrance, USA
Abstract :
Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (a) circular mesa diodes with silver-plated (integrated) heat sinks; (b) pill-type diodes bonded to diamond heat sinks. Both configurations utilised a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3% at 55.5 GHz with 1 W output power.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; heat sinks; microwave generation; molecular beam epitaxial growth; packaging; quartz; semiconductor growth; Ag plated heat sinks; CW; GaAs; MBE; MM-wave generation; V-band; circular mesa diodes; configurations; conversion efficiency; diamond heat sinks; double drift Impatt diodes; fabrication; frequency 55.5 GHz; microwave generation; miniature quartz-ring package; molecular-beam epitaxy; output power; pill-type diodes; semiconductor growth; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840141
