DocumentCode :
1001550
Title :
Post-irradiation effects in CMOS integrated circuits [SRAMs]
Author :
Zietlow, T.C. ; Barnes, C.E. ; Morse, T.C. ; Grusynski, J.S. ; Nakamura, K. ; Amram, A. ; Wilson, K.T.
Volume :
35
Issue :
6
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
1662
Lastpage :
1666
Abstract :
The postirradiation response of CMOS integrated circuits from three vendors was measured as a function of temperature and irradiation bias. It was found that a worst-case anneal temperature for rebound testing is highly process-dependent. At an anneal temperature of 80°C, the timing parameters of a 16 K SRAM from vendor A quickly saturate at maximum values and display no further changes at this temperature. At higher temperatures, evidence for the anneal of the interface-state charge is observed. Dynamic bias during irradiation results in the same saturation value for the timing parameters, but the anneal time required to reach this value is no longer. CMOS/SOS integrated circuits (vendor B) showed similar behavior, except that the saturation value for the timing parameters was stable up to 105°C. After irradiation to 10 Mrad(Si), a 16 K SRAM (vendor C) was annealed at 80°C, and the access time decreased toward prerad values during the anneal
Keywords :
CMOS integrated circuits; annealing; integrated memory circuits; random-access storage; 105 degC; 10E6 rad; 16 kbit; 80 degC; CMOS integrated circuits; SRAM; access time; interface-state charge; irradiation bias; postirradiation response; rebound testing; saturation value; temperature; timing parameters; worst-case anneal temperature; Annealing; CMOS integrated circuits; Circuit testing; Interface states; Ionizing radiation; Laboratories; MOS devices; Random access memory; Temperature dependence; Timing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.25517
Filename :
25517
Link To Document :
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