DocumentCode :
1001571
Title :
Comparison of heavy ion and electron-beam upset data for GaAs SRAMs
Author :
Flesner, L.D. ; Zuleeg, R. ; Kolasinski, W.A.
Author_Institution :
US Naval Ocean Syst. Center, San Diego, CA, USA
Volume :
35
Issue :
6
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
1670
Lastpage :
1672
Abstract :
The authors report and compare the results of two experiments designed to evaluate the extent to which focused electron beam pulses simulate energetic ion upset phenomena in GaAs memory circuits irradiation by heavy ion particle beams and upset mapping using focused electron pulses. Linear energy transfer thresholds and upset cross sections are derived from the data for both methods. The comparison shows good agreement, indicating that for these circuits electron-beam-pulse mapping is a viable simulation technique
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; integrated memory circuits; ion beam effects; random-access storage; GaAs; SRAMs; electron-beam upset data; electron-beam-pulse mapping; energetic ion upset phenomena; focused electron beam pulses; heavy ion particle beams; linear energy transfer thresholds; memory circuits; upset cross sections; upset mapping; Circuit simulation; Cyclotrons; Electron beams; FETs; Focusing; Gallium arsenide; Oceans; Pulse circuits; Random access memory; SRAM chips;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.25519
Filename :
25519
Link To Document :
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