Title :
Modelling and analysis of dual-gate MESFET mixers
Author :
Ashoka, Halappa ; Tucker, Rodney
Author_Institution :
University of Queensland, Department of Electrical Engineering, Brisbane, Australia
Abstract :
A method is presented for the modelling and analysis of dual-gate MESFET mixers. The method can handle all the dominant nonlinear mixing processes, and is valid for arbitrary DC-bias conditions. Good agreement between theory and experiment is demonstrated.
Keywords :
Schottky gate field effect transistors; mixers (circuits); semiconductor device models; solid-state microwave circuits; solid-state microwave devices; DC-bias conditions; analysis; dual-gate MESFET mixers; microwave devices; modelling; nonlinear mixing processes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840146
