• DocumentCode
    1001627
  • Title

    Erratum: Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)

  • Author

    Drummond, T.J. ; Kopp, W. ; Arnold, Dorian ; Fischer, Ray ; Morko¿¿, H. ; Erickson, L.P. ; Palmberg, P.W.

  • Volume
    20
  • Issue
    5
  • fYear
    1984
  • Firstpage
    224
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; Al0.5Ga0.5As; GaAs MISFET; III-V semiconductors; accumulation mode; buried-interface field-effect transistors; cryogenic temperatures; electron saturation velocity; enhancement mode; insulator layer; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840149
  • Filename
    4249762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001627