Title :
Continuous-wave operation of 1.5 ¿m distributed-feedback ridge-waveguide lasers
Author :
Westbrook, L.D. ; Nelson, A.W. ; Fiddyment, P.J. ; Evans, J.S.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
CW operation of 1.5 ¿m ridge-waveguide DFB lasers is reported for the first time. The ridge-waveguide DFB laser structure offers the prospect of high modulation speeds due to the absence of parasitic capacitances associated with reverse-biased current-blocking layers. These devices also represent the first report of CW operation of DFB lasers fabricated using the hybrid LPE/MOCVD crystal-growth technique and also of DFB lasers with gratings produced by electron-beam lithography.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.5 microns; CW operation; InGaAsP-InP DFB laser; distributed-feedback ridge-waveguide lasers; electron-beam lithography; gratings; high modulation speeds; hybrid LPE/MOCVD crystal-growth technique; light output current characteristics; reverse-biased current-blocking layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840151
