DocumentCode :
1001675
Title :
Waveguided optical switch in InGaAs/InP using free-carrier plasma dispersion
Author :
Mikami, O. ; Nakagome, H.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume :
20
Issue :
6
fYear :
1984
Firstpage :
228
Lastpage :
229
Abstract :
Waveguided optical switches using a carrier injection plasma dispersion are proposed. InGaAsP/InP four-port switches with two intersecting single-mode channel waveguides were fabricated by selective LPE and investigated at 1.5 ¿m wavelength. Optical switching was observed, based on mode interference in the waveguide intersecting region.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; liquid phase epitaxial growth; optical communication equipment; optical waveguides; semiconductor growth; semiconductor switches; III-V semiconductors; InGaAsP/InP four-port switches; carrier injection plasma dispersion; integrated optics; intersecting single-mode channel waveguides; mode interference; optical communication; selective LPE; waveguided optical switches;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19840153
Filename :
4249767
Link To Document :
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