DocumentCode
1001675
Title
Waveguided optical switch in InGaAs/InP using free-carrier plasma dispersion
Author
Mikami, O. ; Nakagome, H.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
20
Issue
6
fYear
1984
Firstpage
228
Lastpage
229
Abstract
Waveguided optical switches using a carrier injection plasma dispersion are proposed. InGaAsP/InP four-port switches with two intersecting single-mode channel waveguides were fabricated by selective LPE and investigated at 1.5 ¿m wavelength. Optical switching was observed, based on mode interference in the waveguide intersecting region.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; liquid phase epitaxial growth; optical communication equipment; optical waveguides; semiconductor growth; semiconductor switches; III-V semiconductors; InGaAsP/InP four-port switches; carrier injection plasma dispersion; integrated optics; intersecting single-mode channel waveguides; mode interference; optical communication; selective LPE; waveguided optical switches;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840153
Filename
4249767
Link To Document