Title :
Boundary element method for calculation of depletion layer profiles
Author :
Cuypers, F. ; De Mey, G.
Author_Institution :
Ghent State University, Laboratory of Electronics, Gent, Belgium
Abstract :
A numerical method is presented to calculate the two-dimensional potential distribution in a semiconductor according to the abrupt depletion approximation. The technique is based on the boundary element method, and the shape of the depletion region is determined iteratively.
Keywords :
boundary-elements methods; semiconductor junctions; semiconductors; surface potential; abrupt depletion approximation; boundary element method; depletion layer profiles; numerical method; semiconductor; semiconductor junctions; two-dimensional potential distribution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840154
