Title :
11.2 GHz picosecond optical pulse generation in gain-switched short-cavity InGaAsP injection lasers by high-frequency direct modulation
Author :
Lin, Chinlon ; Burrus, C.A. ; Eisenstein, Gadi ; Tucker, Rodney ; Besomi, P. ; Nelson, R.J.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
We report the generation of high-speed optical pulses in gain-switched short-cavity InGaAsP injection lasers by high-frequency direct modulation. Short pulses (25 ps) with high on/off ratio were obtained at 11.2 GHz from a short-cavity double-channel planar buried-heterostructure (DCPBH) InGaAsP semiconductor laser biased at three times the threshold current. This is the first report of direct modulation above 10 GHz for InGaAsP lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 11.2 GHz picosecond optical pulse generation; gain switched short-cavity InGaAsP injection lasers; high on/off ratio; high-frequency direct modulation; semiconductor laser; short cavity double channel planar buried heterostructure laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840160
