Title :
An advanced bipolar transistor with self-aligned ion-planted base and W/poly emitter
Author :
Chen, Tzu-Ching ; Chuang, C.T. ; Li, G.P. ; Tang, D.D.-L. ; Ketchen, M.B.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
fDate :
8/1/1988 12:00:00 AM
Abstract :
The fabrication, device profile, and electrical characteristics of an advanced bipolar transistor with an LDD-like self-aligned lateral profile are discussed. An ion-implanted extrinsic base with a low sheet resistance of 55 Ω/square and a junction depth of 0.35 μm is obtained using rapid thermal annealing. The extrinsic base and emitter are separated by a temporary submicrometer sidewall spacer, which is subsequently removed to maintain a planar surface during the emitter-active-base formation process. The emitter is contacted by a W-TiN-n+ polysilicon stack with a sheet resistance of 1 Ω/square. As a result of the planarity of the surface during the profile formation for the active region and the decoupling of the structural process from the thin base process, an active base width of 105 nm is obtained
Keywords :
bipolar transistors; elemental semiconductors; ion implantation; semiconductor technology; semiconductor-metal boundaries; silicon; 105 nm; 350 nm; W-TiN-Si emitter contact; active base width; advanced bipolar transistor; device profile; electrical characteristics; emitter-active-base formation process; fabrication; ion-implanted extrinsic base; junction depth; planar surface; polycrystalline Si; rapid thermal annealing; self-aligned ion-planted base; self-aligned lateral profile; sheet resistance; temporary submicrometer sidewall spacer; Bipolar transistors; Boron; Conductivity; Electric resistance; Electric variables; Etching; Fabrication; Implants; Surface resistance; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
