Title :
Influence of degeneracy on behaviour of homojunction GaAs bipolar transistor
Author :
Bailbe, J.P. ; Marty, Alain ; Rey, Germain
Author_Institution :
Centre National de la Recherche Scientifique, Laboratoire d´Automatique et d´Analyse des Systemes, Toulouse, France
Abstract :
In the letter the beneficial influence of degeneracy mechanisms on the electrical properties of a homojunction bipolar transistor has been highlighted.
Keywords :
III-V semiconductors; bipolar transistors; degenerate semiconductors; gallium arsenide; III-V semiconductor; degeneracy mechanisms; electrical properties; homojunction GaAs bipolar transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840173
