DocumentCode
1001888
Title
Influence of degeneracy on behaviour of homojunction GaAs bipolar transistor
Author
Bailbe, J.P. ; Marty, Alain ; Rey, Germain
Author_Institution
Centre National de la Recherche Scientifique, Laboratoire d´Automatique et d´Analyse des Systemes, Toulouse, France
Volume
20
Issue
6
fYear
1984
Firstpage
258
Lastpage
259
Abstract
In the letter the beneficial influence of degeneracy mechanisms on the electrical properties of a homojunction bipolar transistor has been highlighted.
Keywords
III-V semiconductors; bipolar transistors; degenerate semiconductors; gallium arsenide; III-V semiconductor; degeneracy mechanisms; electrical properties; homojunction GaAs bipolar transistor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840173
Filename
4249787
Link To Document