Title :
Explicit continuous model for long-channel undoped surrounding gate MOSFETs
Author :
Iñíguez, Benjamin ; Jiménez, David ; Roig, Jaume ; Hamid, Hamdy A. ; Marsal, Lluís F. ; Pallarès, Josep
Author_Institution :
Departament d´´Enginyeria Electronica, Electrica i Automatica, Univ. Rovira i Virgili, Tarragona, Spain
Abstract :
We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations.
Keywords :
MOSFET; semiconductor device models; channel current; compact device modeling; continuous dc model; explicit continuous model; long-channel undoped surrounding gate MOSFET; numerical simulations; unified charge control model; CMOS technology; Circuit simulation; Circuit synthesis; Helium; MOSFETs; Numerical simulation; Semiconductor device modeling; Semiconductor films; Silicon; Voltage; Charge control model; compact device modeling; surrounding-gate (SGT) MOSFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.852892
