Title :
A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration
Author :
Ishida, Hidetoshi ; Hirose, Yutaka ; Murata, Tomohiro ; Ikeda, Yoshito ; Matsuno, Toshinobu ; Inoue, Kaoru ; Uemoto, Yasuhiro ; Tanaka, Tsuyoshi ; Egawa, Takashi ; Ueda, Daisuke
Author_Institution :
Semicond. Device Res. Center, Matsushita Electr. Ind. Co., Ltd., Kyoto, Japan
Abstract :
A high-power single-pole double throw (SPDT) switch IC using AlGaN/GaN heterojunction field-effect transistors (HFETs) is demonstrated for the first time. The reduction of on-resistance (Ron) and off-capacitance (Coff) for AlGaN/GaN HFETs enables the GaN-based switch IC that can be applied for practical RF applications. A novel Si-doping technique is employed to reduce ohmic contact resistance, which successfully reduces the Ron. The Coff of the HFETs on a sapphire substrate is found to be smaller than that on a SiC substrate, together with low cost fabrication. The GaN-based SPDT switch IC with single-stage configuration is designed by using a circuit simulator based on the extracted device parameters. The fabricated SPDT switch IC achieves insertion loss of 0.26 dB and isolation of 27 dB at 1 GHz, as well as an extremely high-power handling capability of 43 W. This value is 10 times higher than that of typical GaAs-based switch ICs. In addition, the switch IC exhibits low distortion characteristics, where the third-order intercept point of 41 dBm is achieved. The chip size is reduced to 40% as compared with conventional four stage GaAs-based switch ICs by using the single-stage circuit configuration.
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; ohmic contacts; wide band gap semiconductors; 0.26 dB; 1 GHz; 43 W; AlGaN-GaN; HFET; SPDT switch IC; Si-doping technique; circuit simulator; field-effect transistors; high-power RF switch IC; low distortion characteristics; off-capacitance reduction; ohmic contact resistance; on-resistance reduction; sapphire substrate; single-pole double throw switch; single-stage configuration; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Radio frequency; Radiofrequency integrated circuits; Switches; Switching circuits; Field-effect transistors (FETs); GaN; SiC; high power; isolation; loss; sapphire; switch;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.851835