DocumentCode
1001974
Title
Characterization of an amorphous GexSi1-xOy microbolometer for thermal imaging applications
Author
Ahmed, A.H.Z. ; Tait, R.Niall
Author_Institution
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Volume
52
Issue
8
fYear
2005
Firstpage
1900
Lastpage
1906
Abstract
A self-absorbing, self-supported microbolometer was fabricated using CMOS compatible surface micromachining technology. A high resistivity a-GexSi1-xOy resistor layer was suspended using an electrically conductive nichrome link. Prototype device fabrication and characterization indicates these devices may be suitable for application to commercial thermal imaging cameras. Detectivity of 6.7×108cm√Hz/W, responsivity of 1×105 V/W, and thermal time constant of 13 ms were measured and a NETD value of 190 mK was calculated.
Keywords
CMOS integrated circuits; amorphous semiconductors; bolometers; germanium compounds; infrared imaging; micromachining; resistors; 13 ms; 190 mK; CMOS compatible surface micromachining technology; NETD value; a-GexSi1-xOy resistor layer; amorphous materials; electrically conductive nichrome link; germanium compounds; infrared imaging; microbolometer; thermal imaging camera; thermal time constant; Amorphous materials; Amorphous semiconductors; Bolometers; Conducting materials; Fabrication; Infrared detectors; Micromachining; Optical imaging; Semiconductor materials; Thermal conductivity; Amorphous materials; bolometers; germanium compounds; infrared imaging;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2005.852545
Filename
1468385
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