Effects of dopants on the electrical behavior of grain boundary in metal-induced crystallized polysilicon film

Author

Chan, Alain C K ; Cheng, C.F. ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

52

Issue

8

fYear

2005

Firstpage

1917

Lastpage

1919

Abstract

The effects of doping on the electrical behavior of grain boundary in large grain polysilicon-on-insulator (LPSOI) film formed by metal-induced lateral crystallization (MILC) with nickel is studied. It is found that N-channel MOSFETs formed on LPSOI film exhibits larger leakage current and more susceptible to punchthrough compared with P-channel MOSFETs. Strong correlation between leakage current of the devices and the electrical property of a single longitudinal grain boundary is observed. Through careful process calibration and experimental characterization, the effects of dopant on nickel atom diffusion and final transistor characteristics are reported.

Keywords

MOSFET; crystallisation; grain boundaries; leakage currents; nickel; semiconductor doping; semiconductor thin films; silicon-on-insulator; thin film transistors; N-channel MOSFET; Ni; P-channel MOSFET; dopant effects; electrical property; grain boundary; large grain polysilicon-on-insulator film; leakage current; metal-induced crystallized polysilicon film; metal-induced lateral crystallization; nickel atom diffusion; thin-film transistor; Crystallization; Equivalent circuits; Grain boundaries; Impedance matching; Inductors; MOSFETs; Nickel; Radio frequency; Scattering parameters; Thin film transistors; Polysilicon; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.852735

Filename

1468388