Hot-carrier simulation for MOSFETs using a high-speed Monte Carlo method

Author

Kato, Koichi

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

35

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1344

Lastpage

1350

Abstract

Models of hot-carrier-induced phenomena in the high-energy region for small-scale MOSFETs are presented. A free-flight optimization technique has also been developed to simulate the high-energy carrier dynamics by the Monte Carlo method with reasonable CPU time. The hot-carrier effect was investigated in detail from the carrier velocity and energy distribution viewpoint with rigorous treatment of carrier scattering processes, especially for photogeneration and impact ionization. The simulated results were in good agreement with experimental results. The analyses revealed that the hot-carrier effect is mainly dominated by carrier temperature, but is suppressed by impact ionization

Keywords

Monte Carlo methods; digital simulation; electronic engineering computing; hot carriers; insulated gate field effect transistors; semiconductor device models; CPU time; carrier temperature; carrier velocity; energy distribution; experimental results; free-flight optimization technique; high-energy region; high-speed Monte Carlo method; hot carrier simulation; hot-carrier effect; hot-carrier-induced phenomena; impact ionization; models; photogeneration; rigorous treatment of carrier scattering processes; simulated results; small-scale MOSFETs; Degradation; Fluid flow; Hot carrier effects; Hot carriers; Impact ionization; MOSFETs; Optimization methods; Particle scattering; Temperature; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2557

Filename

2557