• DocumentCode
    1002357
  • Title

    New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold

  • Author

    Toffano, Z. ; Destrez, A. ; Hassine, Lotfi

  • Author_Institution
    Ecole Superieur d´Electr., Gif-sur-Yvette, France
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    9
  • Lastpage
    11
  • Abstract
    Linewidth measurements of singlemode and multimode InGaAsP lasers were made above and below threshold with adapted interferometers. Linewidth against inverse power plots Delta nu =f(1/P), show different Schawlow-Townes slopes above and below threshold. Differences have been observed depending on singlemode or multimode laser behaviour. In the singlemode case the linewidth enhancement factor has been determined ( alpha =2.6) by extrapolating and correlating results above and below threshold.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser variables measurement; light interferometry; semiconductor junction lasers; spectral line breadth; InGaAsP lasers; Schawlow-Townes slopes; laser threshold; linewidth enhancement determination; multimode; nterferometers; semiconductor lasers; singlemode; spectrum analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920006
  • Filename
    255892