DocumentCode :
1002376
Title :
Uniform 8x8 array InGaAs/InP multiquantum well asymmetric Fabry-Perot modulators for flipchip solder bond hybrid optical interconnect
Author :
Moseley, A.J. ; Kearley, M.Q. ; Morris, R.C. ; Robbins, D.J. ; Thompson, John ; Goodwin, M.J.
Author_Institution :
GEC Marconi Mater. Technol., Towcester, UK
Volume :
28
Issue :
1
fYear :
1992
Firstpage :
12
Lastpage :
14
Abstract :
The first 8x8 arrays of multiquantum well asymmetric Fabry-Perot modulators in the InGaAs/InP material system are reported. These arrays have optical access through the substrate and are flipchip solder bond assembled for direct connection to silicon integrated circuits for optical interconnect applications. A high degree of uniformity of response is obtained across the array with a mean contrast ratio of 3.5 dB, with a standard deviation of 0.25 dB. Over a 4x4 mm2 chip the standard deviation of peak operating wavelength of the cavity resonance is 3.3 nm.
Keywords :
III-V semiconductors; flip-chip devices; gallium arsenide; indium compounds; integrated optoelectronics; optical interconnections; optical modulation; semiconductor quantum wells; 3.3 nm; 8x8 arrays; InGaAs-InP; MQW; asymmetric Fabry-Perot modulators; direct connection; flipchip solder bond; hybrid optical interconnect; multiquantum well;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920008
Filename :
255894
Link To Document :
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