DocumentCode :
1002526
Title :
GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer
Author :
Toivonen, Mikko ; Salokatve, A. ; Hovinen, M. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
Volume :
28
Issue :
1
fYear :
1992
Firstpage :
32
Lastpage :
34
Abstract :
A GaAs/AlGaAs staircase SAM-APD containing a 10 stage undoped staircase multiplication region is demonstrated. Doping dipoles were inserted in GaAs/Al0.45Ga0.55. As interfaces to increase the effective conduction band offset. Typical dark current at 0.9 VB was 70 pA. The maximum avalanche gain of 1500 was measured near the onset of breakdown. An effective ionisation rate ratio keff=0.2 was obtained from multiplication noise measurements.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; semiconductor doping; GaAs-Al 0.45Ga 0.55As; SAM type; avalanche photodiode; delta-doped staircase; doping dipoles insertion; effective conduction band offset; multiplication noise measurements; separated absorption layer; undoped staircase multiplication region;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920020
Filename :
255906
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1002526
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