DocumentCode :
1002544
Title :
Dynamic latch for high speed GaAs domino circuits
Author :
Nary, K.R. ; Long, S.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
28
Issue :
1
fYear :
1992
Firstpage :
36
Lastpage :
37
Abstract :
A latch for use with GaAs domino logic gates is presented. A hybrid of a GaAs domino logic gate and a two-phase dynamic FET logic gate, the latch stores data during the precharge phase of domino logic operation. It enables the use of domino logic in large scale systems without the need for interfacing with power consumptive static latches. It is implemented with depletion mode MESFETs and dissipates 0.8 mW.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; flip-flops; gallium arsenide; integrated logic circuits; logic gates; 0.8 mW; depletion mode MESFETs; domino circuits; large scale systems; latch; logic gates; precharge phase; two-phase dynamic FET logic gate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920022
Filename :
255908
Link To Document :
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