• DocumentCode
    1002589
  • Title

    Analysis of radiative efficiency of long wavelength semiconductor lasers

  • Author

    Poguntke, K.R. ; Adams, A.R.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    An analysis of the spontaneous emission efficiency of laser diodes which yields C/B32/ where C and B are the Auger and radiative recombination coefficients, respectively, is proposed as a measure of the fundamental band structure and is applied to the temperature and pressure dependence of unstrained 1.5 mu m quantum well lasers.
  • Keywords
    Auger effect; electron-hole recombination; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; Auger recombination coefficient; fundamental band structure; laser diodes; long wavelength semiconductor lasers; pressure dependence; radiative efficiency; radiative recombination coefficients; spontaneous emission efficiency; temperature dependence; unstrained quantum well lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920025
  • Filename
    255911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002589