Title :
Analysis of radiative efficiency of long wavelength semiconductor lasers
Author :
Poguntke, K.R. ; Adams, A.R.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
An analysis of the spontaneous emission efficiency of laser diodes which yields C/B32/ where C and B are the Auger and radiative recombination coefficients, respectively, is proposed as a measure of the fundamental band structure and is applied to the temperature and pressure dependence of unstrained 1.5 mu m quantum well lasers.
Keywords :
Auger effect; electron-hole recombination; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; Auger recombination coefficient; fundamental band structure; laser diodes; long wavelength semiconductor lasers; pressure dependence; radiative efficiency; radiative recombination coefficients; spontaneous emission efficiency; temperature dependence; unstrained quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920025
