Title :
Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications
Author :
Wang, Hongfang ; Wang, Fred ; Zhang, Junhong
Author_Institution :
Virginia Polytech. Inst. & State Univ., Blacksburg
Abstract :
In order to help device selection and optimal application in high-power-density converter designs, a new power semiconductor device figure of merit (FOM)-power density FOM-is proposed, with consideration of power device conduction and switching losses, thermal characteristics, and package. The FOM is derived based on the device theory, and its validity and usefulness are demonstrated with a practical design example.
Keywords :
power semiconductor switches; semiconductor device packaging; switching convertors; electronics packaging; high-power-density converter design; power device conduction; power semiconductor device; semiconductor device figure-of-merit; switching losses; thermal characteristics; Capacitance; Electronic packaging thermal management; Power electronics; Power semiconductor devices; Semiconductor device packaging; Switching converters; Switching loss; Thermal conductivity; Thermal resistance; Voltage; Power converter; power density figure of merit (PDFOM); semiconductor power device;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.910573
