High linearity power operation of AlGaAs/GaAs HBT at 10 GHz

Author

Wang, N.L. ; Ho, W.J. ; Higgins, J.A.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

Volume

28

Issue

1

fYear

1992

Firstpage

55

Lastpage

56

Abstract

Digital communication requires high linearity operation in both the receiver and the transmitter. AlGaAs/GaAs HBTs have achieved excellent saturated power operation throughout the microwave frequency range. The two-tone test of the HBT at 10 GHz was carried out on both CE and CB configurations. At -44 dBc IMD₃, the CE HBT achieved 12 dB gain with a single carrier power density of 0.097 mW/ mu m² and 5.8% collector efficiency. These results show that HBT linearity performance is as competitive as the MESFET in power transistor applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 10 GHz; 12 dB; 5.8 percent; AlGaAs-GaAs; HBTs; III-V semiconductors; collector efficiency; common-base configuration; common-emitter configuration; high linearity operation; microwave frequency range; power transistor applications; receiver; saturated power operation; single carrier power density; transmitter; two-tone test;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920034

Filename

255920