DocumentCode :
1002711
Title :
Short-circuit power driven gate sizing technique for reducing power dissipation
Author :
Ko, Uming ; Balsara, Poras T.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Volume :
3
Issue :
3
fYear :
1995
Firstpage :
450
Lastpage :
455
Abstract :
One major challenge in low-power technology is how to reduce overall power dissipation of a given subsystem without impacting its performance. In this paper we present a technique that can be applied to the nonspeed-critical nets in a circuit in order to reduce overall power dissipation. This technique involves a study of short-circuit power dissipation as a function of input signal slews and output load conditions, to aid in making a judicious choice of drive strengths for various gates in a circuit. The resulting low-power solution does not degrade the original performance and yields a circuit which occupies less silicon area. The technique described here can be incorporated into any power optimization or synthesis tool. Lastly, we present the savings in power and area for a 32-b carry lookahead adder which was designed using the technique described here.<>
Keywords :
CMOS digital integrated circuits; VLSI; integrated circuit layout; carry lookahead adder design; input signal slews; low-power solution; nonspeed-critical nets; output load conditions; power dissipation reduction; power optimization tool; short-circuit power driven gate sizing technique; synthesis tool; Adders; CMOS logic circuits; CMOS technology; Capacitance; Degradation; Delay effects; Drives; MOSFET circuits; Power dissipation; Silicon;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/92.407004
Filename :
407004
Link To Document :
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