• DocumentCode
    1002751
  • Title

    Zero-net-strain and conventionally strained InGaAsP/InP multiquantum well lasers

  • Author

    Perrin, S.D. ; Cooper, Diana Marina

  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    63
  • Lastpage
    65
  • Abstract
    A comparison is made between 16 well zero-net-strain and conventionally strained MQW lasers. Short devices of each structure exhibit low threshold currents and high output powers. For both types of device, the value of T0 is found to be smaller than for 16 well unstrained lasers. Analysis of RIN spectra imply maximum 3 dB bandwidths in the range 34-42 GHz.
  • Keywords
    III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 34 to 42 GHz; InGaAsP-InP/int; MQW lasers; RIN spectra; conventionally strained; maximum 3 dB bandwidths; multiquantum well lasers; output powers; threshold currents; zero-net-strain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920040
  • Filename
    255926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002751