Title :
Enhancement of effective Schottky barrier height on n-type InP
Author :
Ho, M.C. ; He, Yuhong ; Chin, T.P. ; Tu, C.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
The effective Schottky barrier height on n-type InP is increased by a thin heavily-doped p-type surface layer grown by gas-source molecular beam epitaxy. The relationships between the barrier height increment and the doping level and thickness of the surface layer have been studied. The Schottky diodes fabricated by this method show reasonably low leakage current at high reverse bias and high reverse breakdown voltage.
Keywords :
III-V semiconductors; Schottky effect; Schottky-barrier diodes; indium compounds; semiconductor doping; semiconductor-metal boundaries; InP; MBE; Schottky diodes; barrier height increment; breakdown voltage; doping level; effective Schottky barrier height; gas-source molecular beam epitaxy; heavily-doped layer; low leakage current; n-type; p-type surface layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920043
