DocumentCode :
1002776
Title :
Enhancement of effective Schottky barrier height on n-type InP
Author :
Ho, M.C. ; He, Yuhong ; Chin, T.P. ; Tu, C.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Volume :
28
Issue :
1
fYear :
1992
Firstpage :
68
Lastpage :
71
Abstract :
The effective Schottky barrier height on n-type InP is increased by a thin heavily-doped p-type surface layer grown by gas-source molecular beam epitaxy. The relationships between the barrier height increment and the doping level and thickness of the surface layer have been studied. The Schottky diodes fabricated by this method show reasonably low leakage current at high reverse bias and high reverse breakdown voltage.
Keywords :
III-V semiconductors; Schottky effect; Schottky-barrier diodes; indium compounds; semiconductor doping; semiconductor-metal boundaries; InP; MBE; Schottky diodes; barrier height increment; breakdown voltage; doping level; effective Schottky barrier height; gas-source molecular beam epitaxy; heavily-doped layer; low leakage current; n-type; p-type surface layer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920043
Filename :
255929
Link To Document :
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