DocumentCode
1002830
Title
Fabrication of ultra-thin free-standing wires of silicon nitride
Author
Lee, K.L. ; Ahmed, Hameeza ; Kelly, Michael J. ; Wybourne, M.N.
Author_Institution
University of Cambridge, Department of Engineering, Cambridge, UK
Volume
20
Issue
7
fYear
1984
Firstpage
289
Lastpage
291
Abstract
We describe the fabrication of free-standing wires of amorphous silicon nitride of approximate dimensions 125 × 0.15 × 0.1 ¿m, which are important initial test structures for examining quantum deviations from Ohm´s law and Joule´s law predicted to occur in fine geometry samples.
Keywords
semiconductor technology; silicon compounds; size effect; Joule´s law; Ohm´s law; amorphous Si3N4; fabrication; quantum deviations; ultrathin free-standing wires;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840198
Filename
4250486
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