Title :
Reactive ion etched GaAs optical waveguide modulators with low loss and high speed
Author :
Buchmann, Peter ; Kaufmann, H. ; Melchior, H. ; Guekos, G.
Author_Institution :
Swiss Federal Institute of Technology, Zurich, Switzerland
Abstract :
Single-mode rib waveguides and modulators for operation at 1.3 ¿m have been fabricated by reactive ion etching (RIE). The antireflection-coated devices show very low coupling and propagation loss (2 dB/cm) and are suitable as extracavity digital modulators in the Gbit/s range for single-mode system applications.
Keywords :
III-V semiconductors; gallium arsenide; losses; modulators; optical waveguides; reactive sputtering; 1.3 ¿m; GaAs optical waveguide modulators; Gbit/s range; III-V semiconductor; antireflection-coated devices; extra-cavity digital modulators; loss; propagation loss; reactive ion etching; single-mode rib waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840202
