DocumentCode :
1002881
Title :
InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability
Author :
Parrilla, M.L. ; Newson, D.J. ; Quayle, J.A. ; MacBean, M.D.A. ; Skellern, D.J.
Author_Institution :
Macquarie Univ., North Ryde, NSW, Australia
Volume :
28
Issue :
1
fYear :
1992
Firstpage :
85
Lastpage :
86
Abstract :
InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9*9 mu m2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an ft=39 GHz which, to the authors´ knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of ft is in excess of 30 GHz for a range of current densities from 8 to 100 kA cm-2.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 39 GHz; DHBT; HBT; InP-InGaAs; current-driving capability; double-heterojunction bipolar transistors; nonselfaligned process;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920052
Filename :
255938
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1002881
بازگشت