Title :
30 Gbit/s multiplexer and demultiplexer ICs in silicon bipolar technology
Author :
Rein, H.M. ; Hauenschild, J. ; Möller, M. ; McFarland, W. ; Pettengill, D. ; Doernberg, J.
Author_Institution :
Ruhr-Univ., Bochum, Germany
Abstract :
A 2:1 multiplexer and a 1:2 demultiplexer IC fabricated in a 0.8 mu m silicon bipolar technology were operated up to 30 Gbit/s. The increase in speed compared to former measurements is obtained by improving the mounting technique and the measuring setup and by increasing the clock voltage swing. This is the highest data rate reported for any monolithic integrated circuit in any semiconductor technology.
Keywords :
bipolar integrated circuits; data communication equipment; digital integrated circuits; elemental semiconductors; multiplexing equipment; silicon; 0.8 micron; 30 Gbit/s; Si bipolar technology; clock voltage swing; data rate; demultiplexer ICs; monolithic integrated circuit; mounting technique; multiplexer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920060
