• DocumentCode
    1003071
  • Title

    Simulation of quantum transport in monolithic ICs based on In0.53Ga0.47As-In0.52Al0.48As RTDs and HEMTs with a quantum hydrodynamic transport model

  • Author

    Höntschel, Jan ; Stenzel, Roland ; Klix, Wilfried

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Appl. Sci. Dresden, Germany
  • Volume
    51
  • Issue
    5
  • fYear
    2004
  • fDate
    5/1/2004 12:00:00 AM
  • Firstpage
    684
  • Lastpage
    692
  • Abstract
    A new quantum hydrodynamic transport model based on a quantum fluid model is used for numerical calculations of different quantum sized devices. The simulation of monolithic integrated circuits of resonant tunneling structures and high electron mobility transistors (HEMT) based on In053Ga0.47As-In052Al0.48As-InP is demonstrated. With the new model, it is possible to describe quantum mechanical transport phenomena like resonant tunneling of carriers through potential barriers and particle accumulation in quantum wells. Different structure variations, especially the resonant tunneling diode area and the gate width of the HEMT structure, show variable modulations in the output characteristics of the monolithic integrated device.
  • Keywords
    circuit simulation; high electron mobility transistors; monolithic integrated circuits; quantum fluids; resonant tunnelling diodes; semiconductor device models; HEMT; In0.53Ga0.47As-In0.52Al0.48As-InP; RTD; device simulation; gate width; high electron mobility transistors; integrated circuits; monolithic IC; numerical calculations; particle accumulation; potential barriers; quantum fluid model; quantum hydrodynamic transport model; quantum mechanical transport; quantum transport; quantum wells; resonant tunneling devices; resonant tunneling diode area; resonant tunneling structures; Circuits; HEMTs; Hydrodynamics; MODFETs; Poisson equations; Quantum mechanics; Resonant tunneling devices; Schrodinger equation; Semiconductor devices; Semiconductor diodes; Device simulation; HEMTs; high electron mobility transistors; quantum hydrodynamic; quantum transport; resonant tunneling devices;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2004.825815
  • Filename
    1303825
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003071