Title :
An endurance evaluation method for flash EEPROM
Author :
Zous, Nian-Kai ; Chen, Yin-Jen ; Chin, Chi-Yuan ; Tsai, Wen-Jer ; Lu, Tao-Cheng ; Chen, Ming-Shiang ; Lu, Wen-Pin ; Wang, Tahui ; Pan, Samuel C. ; Lu, Chih-Yuan
Author_Institution :
Macronix Int. Co. Ltd., Hsinchu, Taiwan
fDate :
5/1/2004 12:00:00 AM
Abstract :
Trap generation is hard to estimate in a Flash cell due to a dynamic stress field during program and erase. In this paper, a linear correlation is found between the erase state VT rollup and cycling VT window. With the knowledge of the time dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the VT rollup during cycling is evaluated by incorporating field dependent oxide trap generation. The extracted ΔVT degradation slope during constant FN stress can be applied quantitatively to predict the VT window closure during Flash cell cycling.
Keywords :
flash memories; integrated circuit reliability; tunnelling; Fowler-Nordheim tunneling; cycling VT window; dynamic stress field; endurance evaluation; erase state VT rollup; erase stress field; flash EEPROM; flash cell; linear correlation; oxide trap generation; tunnel oxide; Channel hot electron injection; Degradation; EPROM; Flash memory cells; Lead compounds; Leakage current; MOSFETs; Predictive models; Stress; Tunneling; Dynamic stress; Flash EEPROM; evaluation method; tunnel oxide;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.826871
