An endurance evaluation method for flash EEPROM

Author

Zous, Nian-Kai ; Chen, Yin-Jen ; Chin, Chi-Yuan ; Tsai, Wen-Jer ; Lu, Tao-Cheng ; Chen, Ming-Shiang ; Lu, Wen-Pin ; Wang, Tahui ; Pan, Samuel C. ; Lu, Chih-Yuan

Author_Institution

Macronix Int. Co. Ltd., Hsinchu, Taiwan

Volume

51

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

720

Lastpage

725

Abstract

Trap generation is hard to estimate in a Flash cell due to a dynamic stress field during program and erase. In this paper, a linear correlation is found between the erase state V_T rollup and cycling V_T window. With the knowledge of the time dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V_T rollup during cycling is evaluated by incorporating field dependent oxide trap generation. The extracted ΔV_T degradation slope during constant FN stress can be applied quantitatively to predict the V_T window closure during Flash cell cycling.

Keywords

flash memories; integrated circuit reliability; tunnelling; Fowler-Nordheim tunneling; cycling VT window; dynamic stress field; endurance evaluation; erase state VT rollup; erase stress field; flash EEPROM; flash cell; linear correlation; oxide trap generation; tunnel oxide; Channel hot electron injection; Degradation; EPROM; Flash memory cells; Lead compounds; Leakage current; MOSFETs; Predictive models; Stress; Tunneling; Dynamic stress; Flash EEPROM; evaluation method; tunnel oxide;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.826871

Filename

1303830