DocumentCode :
1003148
Title :
Reducing VBE wafer spread of bipolar transistor via a compensation circuit
Author :
Amador, R. ; Polanco, A. ; Hernandez, H. ; Gonzalez, E. ; Nagy, Akos
Author_Institution :
Inst. Superior Politecnico, Habana, Cuba
Volume :
28
Issue :
15
fYear :
1992
fDate :
7/16/1992 12:00:00 AM
Firstpage :
1378
Lastpage :
1379
Abstract :
A circuit which reduces the VBE wafer spread of a standard bipolar transistor in linear ICs is described. This compensation circuit takes advantage of the close correlation between Is and beta r. The spread of VBE is the major source of output error in IC temperature sensors with intrinsic reference, which thereby require resistive trimming.
Keywords :
Monte Carlo methods; bipolar integrated circuits; bipolar transistors; compensation; electric sensing devices; linear integrated circuits; temperature measurement; IC temperature sensors; Monte Carlo simulation; V BE wafer spread; bipolar transistor; compensation circuit; linear ICs; output error;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920876
Filename :
256023
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1003148
بازگشت