Title :
Model for DMOST threshold voltage
Author :
Grahn, Kaj ; Andersson, Mats ; Kuivalainen, P. ; Eranen, S.
Author_Institution :
Tech. Res. Centre of Finland, Espoo, Finland
fDate :
7/16/1992 12:00:00 AM
Abstract :
An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures. The model has been tested by comparing the calculated I-V characteristics for an MOS structure having various doping gradients to the results from a 2-D device simulator.
Keywords :
insulated gate bipolar transistors; insulated gate field effect transistors; power transistors; semiconductor device models; DMOST; I-V characteristics; IGBT transistor structures; MOS-gated power transistors; analytical model; channel region; substrate doping gradient; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920880
