DocumentCode
1003193
Title
High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz
Author
di Forte-Poisson, M.A. ; Brylinski, Christian ; Colomer, G. ; Osselin, D. ; Hersee, S. ; Duchemin, J.P. ; Azan, F. ; Lechevallier, D. ; Lacombee, J.
Author_Institution
Thomson-CSF, Orsay, France
Volume
20
Issue
25
fYear
1984
Firstpage
1061
Lastpage
1062
Abstract
High-power and high-efficiency InP Gunn diodes which were made from wafers grown by LP-MOCVD have been developed in the millimetre-wave range. Average power levels in excess of 50 mW were obtained at 94 GHz with an efficiency of 3%, while an optimised structure operating at 75 mW has been obtained with an efficiency of 2.4%.
Keywords
Gunn diodes; III-V semiconductors; indium compounds; solid-state microwave devices; vapour phase epitaxial growth; 94 GHz; Gunn diodes; III-V semiconductors; InP; LP-MOCVD; MM wave oscillators; chemical vapour deposition; high-efficiency devices; high-power operation; low pressure metalorganic CVD; millimetre-wave range; solid-state microwave devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840725
Filename
4250526
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