Title :
Effects of doping levels at source and drain regions on the performance of a-Si FET
Author :
Katoh, K. ; Imagi, S. ; Watanabe, H.
Author_Institution :
Stanley Electric Co., Research & Development Laboratory, Yokohama, Japan
Abstract :
The transfer characteristics of a-Si FETs are remarkably improved by adopting the phosphorus doped n+-layer at the source and drain contacts. Excess doping of phosphorus, however, causes degradation in the transfer characteristics after heat treatment. The optimum doping level is obtained by depositing the n+-layer at 1 to 5×10¿3 molar ratios of PH3/SiH4.
Keywords :
amorphous semiconductors; doping profiles; elemental semiconductors; field effect transistors; semiconductor doping; silicon; FET; P doped n+ layer; Si:H,P; amorphous Si; doping levels; drain regions; elemental semiconductors; heat treatment; performance study; source region; transfer characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840727
