DocumentCode :
1003217
Title :
InAlAs/InGaAs heterojunction bipolar transistors with AlAs etch-stop layer
Author :
Kyono, C.S. ; Binari, S.C. ; Kruppa, W. ; Ikossi-Anastasiou, K.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Volume :
28
Issue :
15
fYear :
1992
fDate :
7/16/1992 12:00:00 AM
Firstpage :
1388
Lastpage :
1390
Abstract :
A seven monolayer AlAs layer was used as an etch stop at the emitter-base heterojunction of an Npn In0.52Al0.48As/In0.53Ga0.47As HBT. The etch-stop HBTs displayed higher DC gain and similar microwave performance when compared to devices without the AlAs layer.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; AlAs etch stop layer; DC gain; In 0.52Al 0.48As-In 0.53Ga 0.47As; InP substrate; N-p-n HBT; emitter-base heterojunction; heterojunction bipolar transistors; microwave performance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920883
Filename :
256030
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1003217
بازگشت