Title :
Electron mobility in indium nitride
Author :
Tansley, T.L. ; Foley, C.P.
Author_Institution :
Macquarie University, School of Maths & Physics, North Ryde, Australia
Abstract :
Measurements of the transport properties of RF sputtered polycrystalline films of indium nitride are presented. The maximum electron mobility measured is 5000 cm2V¿1s¿1 at 150 K, and the lowest electron concentrations obtained are 5×1016 cm¿3 at 300 K falling to a constant value of 3×1016 in the range 30¿150 K. These results are significantly better than those hitherto reported. The temperature dependence of mobility is attributed to ionised impurity sscattering at low temperatures and space charge scattering at higher temperatures.
Keywords :
III-V semiconductors; carrier mobility; electronic conduction in crystalline semiconductor thin films; impurity scattering; indium compounds; semiconductor thin films; sputtered coatings; 150K; 30 to 150K; 300K; III-V semiconductors; RF sputtered polycrystalline films; electron mobility; ionised impurity scattering; space charge scattering; temperature dependence; transport properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840729
