Title :
A novel low on-resistance Schottky-barrier diode with p-buried floating layer structure
Author :
Saito, Wataru ; Omura, Ichiro ; Tokano, Ken Ichi ; Ogura, Tsuneo ; Ohashi, Hiromichi
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
fDate :
5/1/2004 12:00:00 AM
Abstract :
A novel low on-resistance Schottky-barrier diode (SBD) structure with a p-buried floating layer is demonstrated by fabricating 300-V SBDs using a buried epitaxial growth technique. The fabricated SBDs realize a 50% reduction of chip area and show a possibility of higher breakdown voltage SBD of over 100 V. In addition, both the low on-resistance and the soft-recovery characteristics can be realized by the p-buried floating layer structure. The demonstrated structure is very attractive for reduction of power dissipation without electromagnetic interference noise increase.
Keywords :
Schottky diodes; epitaxial growth; power semiconductor diodes; semiconductor device breakdown; 100 V; SBD structure; breakdown voltage; buried epitaxial growth; buried layer structure; electromagnetic interference noise; low on-resistance; on-resistance Schottky-barrier diode; p-buried floating layer structure; soft-recovery characteristics; Circuit noise; Electromagnetic interference; Epitaxial growth; Fabrication; MOSFET circuits; Noise reduction; Power MOSFET; Power dissipation; Schottky diodes; Voltage; Buried layer structure; Schottky-barrier diode; low on-resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.826886
